? semiconductor components industries, llc, 2011 november, 2011 ? rev. 10 publication order number: bc807 ? 16lt1/d 1 bc807-16l, sbc807-16l bc807-25l, sbc807-25l, bc807-40l, sbc807-40l general purpose transistors pnp silicon features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 45 v collector ? base voltage v cbo ? 50 v emitter ? base voltage v ebo ? 5.0 v collector current ? continuous i c ? 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. sot ? 23 case 318 style 6 1 2 3 http://onsemi.com collector 3 1 base 2 emitter see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information 1 5xx m 5xx = device code xx = a1, b1, or c m = date code* =pb ? free package marking diagram (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location.
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 ma) v (br)ceo ? 45 ? ? v collector ? emitter breakdown voltage (v eb = 0, i c = ? 10 a) v (br)ces ? 50 ? ? v emitter ? base breakdown voltage (i e = ? 1.0 a) v (br)ebo ? 5.0 ? ? v collector cutoff current (v cb = ? 20 v) (v cb = ? 20 v, t j = 150 c) i cbo ? ? ? ? ? 100 ? 5.0 na a on characteristics dc current gain (i c = ? 100 ma, v ce = ? 1.0 v) bc807 ? 16, sbc80 ? 16l bc807 ? 25, sbc807 ? 25l bc807 ? 40, sbc807 ? 40l (i c = ? 500 ma, v ce = ? 1.0 v) h fe 100 160 250 40 ? ? ? ? 250 400 600 ? ? collector ? emitter saturation voltage (i c = ? 500 ma, i b = ? 50 ma) v ce(sat) ? ? ? 0.7 v base ? emitter on voltage (i c = ? 500 ma, i b = ? 1.0 v) v be(on) ? ? ? 1.2 v small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 ma, v ce = ? 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ? 10 v, f = 1.0 mhz) c obo ? 10 ? pf ordering information device specific marking package shipping ? bc807 ? 16lt1g 5a1 sot ? 23 (pb ? free) 3000/tape & reel sbc807 ? 16lt1g bc807 ? 16lt3g 5a1 sot ? 23 (pb ? free) 10,000/tape & reel sbc807 ? 25lt1g bc807 ? 25lt1g 5b1 sot ? 23 (pb ? free) 3000/tape & reel sbc807 ? 25lt1g bc807 ? 25lt3g 5b1 sot ? 23 (pb ? free) 10,000/tape & reel sbc807 ? 25lt3g bc807 ? 40lt1g 5c sot ? 23 (pb ? free) 3000/tape & reel sbc807 ? 40lt1g bc807 ? 40lt3g 5c sot ? 23 (pb ? free) 10,000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 3 typical characteristics ? bc807 ? 16lt1 figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 500 1 0.1 0.01 0.001 0.01 0.1 1 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 10 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 4 typical characteristics ? bc807 ? 16lt1 i b , base current (ma) figure 5. saturation region 100 10 1.0 v r , reverse voltage (volts) figure 6. temperature coefficients +1.0 i c , collector current (ma) figure 7. capacitances -0.1 -1.0 -1.0 -10 -100 -1000 -2.0 -1.0 0 v ce , collector-emitter voltage (volts ) v , temperature coefficients (mv/ c) c, capacitance (pf) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.1 -10 -100 -1.0 -10 -100 t j = 25 c i c = -10 ma i c = -100 ma i c = -300 ma i c = -500 ma vc for v ce(sat) vb for v be c ob c ib
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 5 typical characteristics ? bc807 ? 25lt1 figure 8. dc current gain vs. collector current figure 9. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 500 1 0.1 0.01 0.001 0.01 0.1 1 figure 10. base emitter saturation voltage vs. collector current figure 11. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 10 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c figure 12. current gain bandwidth product vs. collector current i c , collector current (ma) 1000 10 1 0.1 10 100 f t , current ? gain ? bandwidth product (mhz) v ce = 1 v t a = 25 c 1000 100
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 6 typical characteristics ? bc807 ? 25lt1 i b , base current (ma) figure 13. saturation region 100 10 1.0 v r , reverse voltage (volts) figure 14. temperature coefficients +1.0 i c , collector current (ma) figure 15. capacitances -0.1 -1.0 -1.0 -10 -100 -1000 -2.0 -1.0 0 v ce , collector-emitter voltage (volts ) v , temperature coefficients (mv/ c) c, capacitance (pf) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.1 -10 -100 -1.0 -10 -100 t j = 25 c i c = -10 ma i c = -100 ma i c = -300 ma i c = -500 ma vc for v ce(sat) vb for v be c ob c ib
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 7 typical characteristics ? bc807 ? 40lt1 figure 16. dc current gain vs. collector current figure 17. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 200 400 600 800 1000 1 0.1 0.01 0.001 0.01 0.1 1 figure 18. base emitter saturation voltage vs. collector current figure 19. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 10 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c figure 20. current gain bandwidth product vs. collector current i c , collector current (ma) 1000 10 1 0.1 10 100 f t , current ? gain ? bandwidth product (mhz) v ce = 1 v t a = 25 c 1000 100 100 300 500 700 900
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 8 typical characteristics ? bc807 ? 40lt1 i b , base current (ma) figure 21. saturation region 100 10 1.0 v r , reverse voltage (volts) figure 22. temperature coefficients +1.0 i c , collector current (ma) figure 23. capacitances -0.1 -1.0 -1.0 -10 -100 -1000 -2.0 -1.0 0 v ce , collector-emitter voltage (volts ) v , temperature coefficients (mv/ c) c, capacitance (pf) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.1 -10 -100 -1.0 -10 -100 t j = 25 c i c = -10 ma i c = -100 ma i c = -300 ma i c = -500 ma vc for v ce(sat) vb for v be c ob c ib
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 9 typical characteristics ? bc807 ? 16lt1, bc807 ? 25lt1, bc807 ? 40lt1 figure 24. safe operating area v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) thermal limit 100 ms 1 s 10 ms 1 ms
bc807 ? 16l, sbc807-16l bc807 ? 25l, sbc807-25l, bc807 ? 40l, sbc807 ? 40l http://onsemi.com 10 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 6: pin 1. base 2. emitter 3. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bc807 ? 16lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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